 The MultiProbe™ Atomic Force Nanoprober (AFP) is a high-resolution imaging and probing tool that electrically characterizes advanced semiconductor circuitry and identifies failures that would otherwise be invisible to even the most sophisticated optical microscopes. The MultiProbeª AFP II Nanoprober is a nondestructive semiconductor fault isolation and probing tool, with proven measurement capabilities for technology nodes as small as 22nm. It is used to perform physical and electrical measurements without requiring the use of a vacuum chamber or destructive techniques such as FIB marking or SEM inspection.
MPIIB Probing Head
After demonstrating its effectiveness on the 45nm technology node, MultiProbe™ has designed the MPII head to go beyond 22nm devices.
The MP IIb’s laser feedback control allows users to image and probe, uninterrupted for days, without changing a single probe tip.
Used in Failure Analysis (FA), Reliability, Design, and research labs around the world, the Atomic Force Prober has already proven itself as the most reliable, versatile, and capable nanoprober available.
FLEXIBLE MPIIb HEAD CONFIGURATION
A single head allows ultra low-current localization of defects using PicoCurrent imaging and SCM
A two head system provides continuity and two-terminal measurements, via chain resistance
Three heads allow transistor curves of SOI n- and p- FETS as well as bulk n-FETS
Four heads enable “Kelvin” resistance measurements
Five heads will extract full bulk-device parameters
A complete 6-head system is used for contacting all critical nodes for eDRAM
MultiProbe’s AFPII Nanoprober allows analysts to measure any nanoscale device, physically and electrically, without the need for a vacuum chamber. It offers quick sample and probe-change capabilities and is free from the threshold shifting effects produced by exposure to charged beams used in other tools. Its sharp probes, piezo-electric nano positioning, and force feedback provide a nanometer-resolution map of surface structures, and the ability to place up to 6 probes on the desired nodes quickly and with controlled contact force.
The highly sensitive fault localization technique of current imaging, combined with parametric extraction ability of the AFP, form a powerful analytical tool. Extension of the single probe atomic force microscope (AFM) technique to a multiple-probe AFP allows the user to perform all necessary measurements to characterize either a failure or to evaluate a process at the contact node level. Imaging requires a few minutes and IV curve extraction a few minutes more. The Resolution of this imaging mode is better than 15pA
In the AFP image on your left, PicoCurrent imaging reveals variations in conductivity across an IC polished to the tungsten contact level. Low resistance paths to ground show higher current and hence darker features. Higher resistances are proportionately lighter. Such contrast provides an instant look at the sample layout, allowing process defects like CVD seams and mis-aligned diffusions to be easily and quickly identified. A corresponding diagram shows how the PicoCurrent sensor operates with the AFP to produce such an image.
The MultiProbe AFP has been acclaimed for its ability to extract properties at every possible stage of the process, from silicide to final metallization.  Engineers that use the AFP for Failure Analysis report that it has reduced FA processes to such a degree, that, what previously took a week's worth of additional process steps to accomplish, now requires as little time as it takes to pull a wafer at contact or silicide level. How valuable would it be to measure properties, one month, one week or even one day sooner?
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Since product launch of the original hardware, ASAP-1® has become the standard piece of preparation equipment that engineers involved in disciplines such as failure analysis, yield enhancement and competitive analysis have come to rely on for backside preparation.
